IndiumV3, Main, Repository, bibRecord, 000292

Transparent diamond electrodes for tunable micro-optical devices

Identifieur interne : 000292 ( Main/Repository ); précédent : 000291; suivant : 000293

Transparent diamond electrodes for tunable micro-optical devices

Auteurs : RBID : Pascal:13-0309105

Descripteurs français

Pascal (Inist)
- Electrode carbone, Addition bore, Matériau dopé, Diamant synthétique, Nitrure, Semiconducteur III-V, Composé III-V, Actionneur, Oxyde d'indium, Oxyde d'étain, Propriété transport, Addition phosphore, Couche mince, Dépendance température, Dépendance tension, Caractéristique courant tension, Déformation, Semiconducteur type p, Effet Hall, Propriété électrique, 8245F, 8105U, 8105E, 7361.

English descriptors

KwdEn :
- Actuator, Boron addition, Carbon electrode, Deformation, Doped materials, Electrical properties, Hall effect, III-V compound, III-V semiconductors, Indium oxide, Nitrides, Phosphorus addition, Synthetic diamond, Temperature dependence, Thin film, Tin oxide, Transport properties, Voltage current curve, Voltage dependence, p type semiconductor.

Abstract

Boron-doped nanocrystalline diamond (NCD:B) elastic layers combined with aluminum nitride (AlN) piezo-actuators are well suitable for ultrathin, highly transparent and mechanically stable micro-optical devices operating at high frequencies. In such unimorph structures NCD:B layers serve as advanced transparent electrodes instead of commonly used indium tin oxide. The carrier transport properties of heavily p-doped NCD thin films are characterized by temperature-dependent voltage-current and Hall measurements. In addition, the piezo-driven aspheric deformation of NCD:B/AlN micro lenses is demonstrated by means of integrated multi-sector actuators.

Links toward previous steps (curation, corpus...)

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Links to Exploration step

Pascal:13-0309105

Le document en format XML

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<author><name sortKey="Lebedev, V" uniqKey="Lebedev V">V. Lebedev</name>
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</titleStmt>
<publicationStmt><idno type="inist">13-0309105</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0309105 INIST</idno>
<idno type="RBID">Pascal:13-0309105</idno>
<idno type="wicri:Area/Main/Corpus">000708</idno>
<idno type="wicri:Area/Main/Repository">000292</idno>
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<seriesStmt><idno type="ISSN">0925-9635</idno>
<title level="j" type="abbreviated">Diam. relat. mater.</title>
<title level="j" type="main">Diamond and related materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Actuator</term>
<term>Boron addition</term>
<term>Carbon electrode</term>
<term>Deformation</term>
<term>Doped materials</term>
<term>Electrical properties</term>
<term>Hall effect</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium oxide</term>
<term>Nitrides</term>
<term>Phosphorus addition</term>
<term>Synthetic diamond</term>
<term>Temperature dependence</term>
<term>Thin film</term>
<term>Tin oxide</term>
<term>Transport properties</term>
<term>Voltage current curve</term>
<term>Voltage dependence</term>
<term>p type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electrode carbone</term>
<term>Addition bore</term>
<term>Matériau dopé</term>
<term>Diamant synthétique</term>
<term>Nitrure</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Actionneur</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Propriété transport</term>
<term>Addition phosphore</term>
<term>Couche mince</term>
<term>Dépendance température</term>
<term>Dépendance tension</term>
<term>Caractéristique courant tension</term>
<term>Déformation</term>
<term>Semiconducteur type p</term>
<term>Effet Hall</term>
<term>Propriété électrique</term>
<term>8245F</term>
<term>8105U</term>
<term>8105E</term>
<term>7361</term>
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<front><div type="abstract" xml:lang="en">Boron-doped nanocrystalline diamond (NCD:B) elastic layers combined with aluminum nitride (AlN) piezo-actuators are well suitable for ultrathin, highly transparent and mechanically stable micro-optical devices operating at high frequencies. In such unimorph structures NCD:B layers serve as advanced transparent electrodes instead of commonly used indium tin oxide. The carrier transport properties of heavily p-doped NCD thin films are characterized by temperature-dependent voltage-current and Hall measurements. In addition, the piezo-driven aspheric deformation of NCD:B/AlN micro lenses is demonstrated by means of integrated multi-sector actuators.</div>
</front>
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<fA03 i2="1"><s0>Diam. relat. mater.</s0>
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<fA05><s2>38</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Transparent diamond electrodes for tunable micro-optical devices</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ZUERBIG (V.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PLETSCHEN (W.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HEES (J.)</s1>
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<fA11 i1="04" i2="1"><s1>SAH (R. E.)</s1>
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<fA11 i1="05" i2="1"><s1>KIRSTE (L.)</s1>
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<fA11 i1="06" i2="1"><s1>HEIDRICH (N.)</s1>
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<fA11 i1="07" i2="1"><s1>NEBEL (C. E.)</s1>
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<fA11 i1="08" i2="1"><s1>AMBACHER (O.)</s1>
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<fA11 i1="09" i2="1"><s1>LEBEDEV (V.)</s1>
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<fA14 i1="01"><s1>Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72</s1>
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<fA14 i1="02"><s1>IMTEK, University of Freiburg, Georges-Köhler-Allee 103</s1>
<s2>79110 Freiburg</s2>
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<fA20><s1>101-103</s1>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>Boron-doped nanocrystalline diamond (NCD:B) elastic layers combined with aluminum nitride (AlN) piezo-actuators are well suitable for ultrathin, highly transparent and mechanically stable micro-optical devices operating at high frequencies. In such unimorph structures NCD:B layers serve as advanced transparent electrodes instead of commonly used indium tin oxide. The carrier transport properties of heavily p-doped NCD thin films are characterized by temperature-dependent voltage-current and Hall measurements. In addition, the piezo-driven aspheric deformation of NCD:B/AlN micro lenses is demonstrated by means of integrated multi-sector actuators.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001C01H02</s0>
</fC02>
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</fC02>
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<fC02 i1="04" i2="3"><s0>001B70C61</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Electrode carbone</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Carbon electrode</s0>
<s5>01</s5>
</fC03>
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<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Addition bore</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Boron addition</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Adición boro</s0>
<s5>02</s5>
</fC03>
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<s5>03</s5>
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<s5>03</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Synthetic diamond</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Diamante sintético</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Nitrure</s0>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Nitrides</s0>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Nitruro</s0>
<s2>NA</s2>
<s5>05</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Actionneur</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Actuator</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Accionador</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Propriété transport</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Transport properties</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Propiedad transporte</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Addition phosphore</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Phosphorus addition</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Adición fósforo</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Thin film</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Dépendance tension</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Voltage dependence</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Déformation</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Deformation</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Deformación</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Semiconducteur type p</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>p type semiconductor</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Semiconductor tipo p</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Effet Hall</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Hall effect</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Efecto Hall</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Propriété électrique</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Electrical properties</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Propiedad eléctrica</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>8245F</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>8105U</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>294</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Transparent diamond electrodes for tunable micro-optical devices
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Transparent diamond electrodes for tunable micro-optical devices

Transparent diamond electrodes for tunable micro-optical devices

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